Infineon 1ED44175N01BXTSA1 IGBT, 11.9 A 11.4 V, 6-Pin PG-SOT23-6-3, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Common Emitter
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Infineon 1ED44175N01BXTSA1 IGBT, 11.9 A 11.4 V, 6-Pin PG-SOT23-6-3
Specifications of Infineon 1ED44175N01BXTSA1 IGBT, 11.9 A 11.4 V, 6-Pin PG-SOT23-6-3 | |
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Instock | instock |
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