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Infineon Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228

About The 00065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.Infineon Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0

Infineon Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.00065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Number of Elements per Chip: 1, Series: HEXFET

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Infineon Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228

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Infineon Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228
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    4V, Number of Elements per Chip: 1, Series: HEXFET.00065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.

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