Infineon SRAM, CY14B104NA-BA25XI- 4Mbit

Honeywell HDLS Series Limit Switch, 2NO/2NC, IP65, IP66, IP67, DPDT, Die Cast Zinc Housing, 600V ac Max, 10A Max, Maximum DC Voltage: 250V, Connection Type: 3/4 in NPT, Action Type: Snap Action, Length: 47.

Tivoly 8-Piece, 10mm Max, 3mm Min, Set Type: Concrete Drill Set, MPN: 10960370034.

1 x 1.Infineon BGSA143ML10E6327XTSA1 RF Switch, 10-Pin TSLP-10-2, Dimensions: 1.

Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2.5 W.

Nexperia 30V 1A, Schottky Diode, 2-Pin SOD-323F PMEG3010EJ,115, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Non-Repetitive Forward Surge Current: 9A.

4mm.4 x 1.

Infineon SRAM- 4Mbit, Organisation: 256K ´ 16, Number of Bits per Word: 16bit, Maximum Random Access Time: 20 ns, 25 ns, 45 ns, MPN: CY14B104NA-BA25XI.

) x 11mm, Minimum Operating Temperature: -55°C, Diameter: 5mm, Maximum Operating Temperature: +105°C, Lead Pitch: 2mm, Lifetime: 2000h, Leakage Current: 4 μA, Ripple Current: 120mA, Tolerance: ±20%.Nichicon 10μF Electrolytic Capacitor 50V dc, Through Hole - UPS1H100MDD, Capacitance: 10µF, Dimensions: 5 (Dia.

Infineon SRAM- 4Mbit, Organisation: 256K ´ 16, Number of Bits per Word: 16bit, Maximum Random Access Time: 20 ns, 25 ns, 45 ns, MPN: CY14B104NA-BA25XI.

Nichicon 10μF Electrolytic Capacitor 50V dc, Through Hole - UPS1H100MDD, Capacitance: 10µF, Dimensions: 5 (Dia.) x 11mm, Minimum Operating Temperature: -55°C, Diameter: 5mm, Maximum Operating Temperature: +105°C, Lead Pitch: 2mm, Lifetime: 2000h, Leakage Current: 4 μA, Ripple Current: 120mA, Tolerance: ±20%.