onsemi Dual P-Channel MOSFET, 700 mA, 12 V, 6-Pin SOT-363 FDG6316P
onsemi Dual P-Channel MOSFET, 700 mA, 12 V, 6-Pin SOT-363 FDG6316P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 650 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 300 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Length: 2mm, Maximum Operating Temperature: +150 °C.