onsemi P-Channel MOSFET, 11 A, 20 V, 8-Pin SOIC FDS6576
onsemi P-Channel MOSFET, 11 A, 20 V, 8-Pin SOIC FDS6576, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Length: 5mm, Maximum Operating Temperature: +150 °C.