Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1
Infineon N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 IPP200N25N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.36mm, Maximum Operating Temperature: +175 °C.